ICS 31.080.30 CCS L 44 团体 标准 T/CASAS 047—2025 代替 T/CASAS 047 —2024 碳化硅金属氧化物半导体场效应晶体管 （SiC MOSFET ） 动态高温高湿反偏 (DH3TRB) 试验方法 Dynamic high -humidity, high -temperature reverse bias test method (DH3TRB) for silicon carbide metal -oxide semiconductor filed effect transistor (SiC MOSFET ) 2025 - 12 - 30发布 2025 - 12 - 30实施 第三代半导体产业技术创新战略联盟 发布 全国团体标准信息平台 全国团体标准信息平台 T/CASAS 047 —2025 I 目次 前言 ................................ ................................ ................................ ................................ ................................ ...... II 引言 ................................ ................................ ................................ ................................ ................................ .... III 1 范围 ................................ ................................ ................................ ................................ ................................ .. 1 2 规范性引用文件 ................................ ................................ ................................ ................................ .............. 1 3 术语和定义 ................................ ................................ ................................ ................................ ...................... 1 4 原理 ................................ ................................ ................................ ................................ ................................ .. 2 5 试验条件 ................................ ................................ ................................ ................................ .......................... 2 6 仪器设备 ................................ ................................ ................................ ................................ .......................... 2 7 样品 ................................ ................................ ................................ ................................ ................................ .. 3 8 试验步骤 ................................ ................................ ................................ ................................ .......................... 3 试验流程 ................................ ................................ ................................ ................................ ................... 3 初始值测量 ................................ ................................ ................................ ................................ ............... 3 施加应力 ................................ ................................ ................................ ................................ ................... 3 8.3.1 应力条件 ................................ ................................ ................................ ................................ ............ 3 8.3.2 应力波形 ................................ ................................ ................................ ................................ ............ 4 撤除应力 ................................ ................................ ................................ ................................ ................... 5 中间测量或终点测量 ................................ ................................ ................................ ............................... 5 9 试验数据处理 ................................ ................................ ................................ ................................ .................. 5 10 试验报告 ................................ ................................ ................................ ................................ ........................ 6 附录 A （资料性） SiC MOSFET 动态高温高湿反偏试验记录表 ................................ .................... 7 参考文献 ................................ ................................ ................................ ................................ .............................. 8 全国团体标准信息平台 全国团体标准信息平台 T/CASAS 047 —2025 II 前言 本文件按照 GB/T 1.1 —2020《标准化工作导则 第1部分：标准化文件的结构和起草规则》的规定 起草。 本