- 7 - 60747-9 @IEC:2007 SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 9: Insulated-gate bipolar transistors (IGBTs) 1 Scope This part of IEC 60747 gives product specific standards for terminology, letter symbols essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs), 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition IEC 60747-1:2006, Semiconductor devices-Part 1:General IEC 60747-2, Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes IEC 60747-6, Semiconductor devices-Part 6:Thyristors IEC 61340 (allparts),Electrostatics 3Terms and definitions For the purposes of this document, the following terms and definitions apply 3.1 Graphical symbol of IGBT The graphical symbol as shown below is used in this edition of IEC 60747-9. c Graphical symbol NOTE Only the_ graphical symbol for N-channel IGBT is used in this standard. It equally applies for the measurement of P-channel devices. In the case of P-channel devices polarity must be adapted - 8- 60747-9 @IEC:2007 3.2 General terms 3.2.1 insulated-gate bipolar transistor IGBT transistor having a conduction channel and a PN junction. The current flowing through the channel and the junction is controlled by an electric field resulting from a voltage applied between the gate and emitter terminals See IEV 521-04-05 NOTE With collector-emitter voltage applied, the PN junction is forward biased. 3.2.2 N-channel IGBT IGBT that has one or more N-type conduction channels SeeIEV521-05-06 3.2.3 P-channel IGBT IGBT that has one or more P-type conduction channels SeeIEV521-04-05 3.2.4 collector current (of an IGBT) Ic direct current that is switched (controlled) by the IGBT 3.2.5 collector terminal, collector (of an IGBT) c for an N-channel (a P-channel) IGBT, the terminal to (from) which the collector current flows from(to)theexternalcircuit See IEV 521-07-05 and IEV 521-05-02. 3.2.6 emitter terminal, emitter (of an IGBT) E for an N-channel (a P-channel) IGBT, the terminal from (to) which the collector current flows to(from)theexternalcircuit See IEV 521-07-04 3.2.7 gate terminal, gate (of an IGBT) G terminal to which a voltage is applied against the emitter terminal in order to control the collectorcurrent See IEV 521-07-09 3.3 Terms related to ratings and characteristics; voltages and currents 3.3.1 collector-emitter (d.c.) voltage voltage between collectorand emitter 3.3.2 collector-emitter voltage with gate-emitter short-circuited VcES collector-emitter voltage at which the collector current has a specified low (absolute) value with gate-emitter short-circuited 60747-9 @IEC:2007 3.3.3 collector-emitter sustaining voltage VcE*sus collector-emitter breakdown voltage at relatively high values of collector current where the breakdown voltage is relatively insensitive to changes in collector current, for a specified termination between gate and emitter terminals NOTE 1 The specified termination between gate and emitter terminals is indicated in the letter symbol by the third subscript **; see 4.1.2 of TEC 60747-7. NoTE 2, When necessary, a suitable qualifier is added to the basic term to indicate a specific termination between gate and emitter terminals Example: Collector-emitter sustaining voltage with gate and emitter terminals short-circuited Vcessus NOTE 3 The basic term may be shortened if the meaning is clear from the letter symbol used. Example: Collector-emitter sustaining voltage VcERsus NOTE 4 This term is important for high-voltage devices, for example more than 4 kV 3.3.4 collector-emitter breakdown voltage V(BR)CES voltage between collector and emitter above which the collector current rises steeply, with gate to emitter short-circuited SeeTEV521-05-06 3.3.5 collector-emitter saturation voltage VcEsat collecto