BSIEC62047-46:2025 BSlStandardsPublication SemiconductordevicesMicro- electromechanical devices Part 46: Silicon based MEMS fabrication technology Measurement methodoftensilestrengthofnanoscalethicknessmembrane bsi. BSIEC62047-46:2025 BRITISHSTANDARD Nationalforeword ThisBritishStandardistheUKimplementationofIEC62047-46:2025 TheUKparticipationinitspreparationwasentrustedtoTechnical CommitteeEPL/47,Semiconductors. Alistoforganizationsrepresentedonthiscommitteecanbeobtainedon requestto its committeemanager. Contractualandlegalconsiderations Thispublicationhasbeenprepared ingoodfaith,howeverno representation,warranty,assuranceorundertaking(expressor implied) is or will bemade,and noresponsibility or liability is orwill be accepted byBsIinrelationtotheadequacy,accuracy,completeness or liabilityis expresslydisclaimedtothefull extentpermitted bythelaw. Thispublicationisprovidedasis,and istobeused atthe recipient's own risk. The recipient is advised to consider seeking professional guidance with respecttoits use ofthispublication. This publication is not intended to constitute a contract.Users are responsibleforitscorrectapplication. @TheBritishStandardsInstitution2025 PublishedbyBSIStandardsLimited2025 ISBN9780539218503 ICS31.080.99 Compliance with a British Standard cannot confer immunity from legalobligations. ThisBritishStandard waspublishedundertheauthorityofthe StandardsPolicyandStrategyCommitteeon30April2025. Amendments/corrigendaissuedsincepublication Date Textaffected BSIEC62047-46:2025 JEC IEC62047-46 Edition 1.02025-04 INTERNATIONAL STANDARD Semiconductordevices-Micro-electromechanicaldevices Part46:Silicon based MEMSfabricationtechnology-Measurement method of tensilestrengthofnanoscalethicknessmembrane INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 31.080.99 ISBN 978-2-8327-0350-2 Warning!Make sure that you obtained this publication from an authorized distributor. Registered trademark of the International Electrotechnical Commission BSIEC62047-46:2025 -2 IEC62047-46:2025IEC2025 CONTENTS FOREWORD 3 Scope 5 1 2 Normativereferences. 5 3 Terms and definitions 5 Requirements 6 4.1 In-situ on-chip tester design requirements..... 4.2 In-situon-chiptesterfabrication requirements 9 4.3 Testing environment requirements 5 Testing method... 5.1 General.. .9 5.2 Nanoscalethicknessmembranetensilestrengthtestingmethodoperation process .9 5.3 Nanoscalethicknessmembranetensilestrengthtestingmethodoperation requirements... 10 5.4 Tensilestrength in-situon-chiptestersizerecommendations. 5.5 Tensiletestingmethodanalysisprocess 6 Test report. 11 AnnexA(informative)Examplesoftensilestrengthtesting of nanoscalethickness membrane 12 A.1 General.. A.2 Sizerecommendations ofnanoscalethickness membranetensile strength in- situon-chiptester .12 A.3 Nanoscalethickness membranetensile strengthtest. 13 Bibliography... Figure1-In-situon-chiptensile strengthtester.. Figure2-Nanoscalethicknessmembranetensilestrengthtestingmethodoperation process... ..10 Figure A.1-Design of the deflection ruler and the displacement ruler. Figure A.2-Bulk silicon fabrication process example of in-situon-chiptester 14 Figure A.3-Test area. .14 TableA.1-Sizerecommendations of nanoscalethicknessmembranetensile strength in-situon-chiptesterand corresponding cvalue. TableA.2-Nanoscalethicknessmembranetensile strengthtest results. BSIEC62047-46:2025 IEC62047-46:2025IEC2025 - 3 - INTERNATIONALE ELECTROTECHNICALCOMMISSION SEMICONDUCTORDEVICES - MICRO-ELECTROMECHANICALDEVICES Part46:SiliconbasedMEMSfabricationtechnology - Measurementmethodoftensilestrength ofnanoscalethicknessmembrane FOREWORD The International Electrotechnical Commission (IEC)is a worldwide organization for standardization comprising all national electrotechnical committees (iECNational Committees).TheobjectoflEC istopromote international in addition to other activities,IEC publishes International Standards,Technical Specifications,Technical Reports, preparation is entrusted to technical committees; any IEC Nation