ICS 31.080 H 80/84 团体 标准 T/CASA S 004.2—2018 4H碳化硅衬底及外延层缺陷图谱 The Metallographs Collection for Defects in both 4H -SiC Substrates and Epilayers 版本： V01.00 2018-11-20发布 2018-11-20实施 第三代半导体产业技术创新战略联盟 发布 全国团体标准信息平台 T/CASA S 004.2-2018 I 目录 前言 ................................ ................................ ................................ ................................ ........ III 1 范围 ................................ ................................ ................................ ................................ ..... 1 2 规范性引用文件 ................................ ................................ ................................ ................. 1 3 术语和定义 ................................ ................................ ................................ ......................... 1 4 SiC衬底及外延 ................................ ................................ ................................ .................. 1 4.1 4H碳化硅 ................................ ................................ ................................ ................ 1 4.2 晶型 ................................ ................................ ................................ .......................... 2 4.3 物理气相输运生长 ................................ ................................ ................................ .. 3 4.4 4H-SiC衬底 ................................ ................................ ................................ ............. 5 4.5 4H-SiC同质外延及台阶控制外延生长 ................................ ................................ . 6 4.6 4H-SiC外延层及外延晶片 ................................ ................................ ..................... 6 4.7 KOH腐蚀 ................................ ................................ ................................ ................. 7 5 缺陷基本术语及分类 ................................ ................................ ................................ ......... 9 6 4H-SiC衬底缺陷 ................................ ................................ ................................ .............. 11 6.1 位错 ................................ ................................ ................................ ........................ 11 6.2 层错 ................................ ................................ ................................ ........................ 14 6.3 微管 ................................ ................................ ................................ ........................ 17 6.4 碳包裹体 ................................ ................................ ................................ ................ 20 6.5 晶型包裹体 ................................ ................................ ................................ ............ 21 6.6 双Shockley 型堆垛层错 ................................ ................................ ........................ 23 6.7 螺位错 ................................ ................................ ................................ .................... 24 6.8 刃位错 ................................ ................................ ................................ .................... 26 6.9 基晶面位错 ................................ ................................ ................................ ............ 27 6.10 小角晶界 ................................ ................................ ................................ ................ 29 6.11 划痕 ................................ ................................ ................................ ........................ 30 6.12 CMP隐含划痕 ................................ ................................ ................................ ....... 34 7 4H-SiC外延缺陷 ................................ ................................ ................................ .............. 36 7.1 表面形貌缺陷 ................................ ................................ ................................ ........ 36 7.2 掉落颗粒物 ................................ ................................ .